Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1−xAs FinFET
نویسندگان
چکیده
In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1−xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In0.7Ga0.3As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 °C.
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